| PART |
Description |
Maker |
| MMG20241H MMG20241HT1 |
GaAs Enhancement Mode pHEMT
|
NXP Semiconductors
|
| MGA-412P8-TR1G MGA-412P8-BLKG MGA-412P8-TR2G |
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
|
Avago Technologies Ltd.
|
| ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK |
ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard)
ETC[ETC]
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| LX5560L LX5560 |
InGaAs - E-Mode pHEMT Low Noise Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| ATF-541M4-TR2 ATF-541M4 ATF-541M4-BLK ATF-541M4-TR |
ATF-541M4 · Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
DEMO-ATF-5X1M4A · Demonstration circuit board for ATF-541M4 and ATF-551M4 (2 GHz)
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| HMC605LP309 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
|
Hittite Microwave Corporation
|
| HMC373LP306 373LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
|
Hittite Microwave Corporation
|
| 373LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
|
美国讯泰微波有限公司上海代表
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
